FEATURES

• TrenchFET® Gen IV power MOSFET

• Very low RDS x Qg figure-of-merit (FOM)

• Leadership RDS(ON) minimizes power loss

from conduction

• 2.5 V ratings and operation at low voltage

gate drive

• 100 Rg and UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Battery management

• DC/DC converters

• Load switch