600 V POWER MOSFETs

Vishay is adding to its Super Junction power MOSFET family with new n-channel devices in the TO-247 package, featuring ultra-low maximum on-resistance and low gate charge for an improved figure of merit (FOM).

Features:

• High Ear capability

• Improved Ron x Qg figure of merit (FOM)

    – 18.81 Ω-nC (SiHG22N60S-E3)

        - SiHP22N60S-E3, SiHF22N60S-E3, and SiHB22N60S-E3 also available

    – 15.12 Ω-nC (SiHG47N60S-E3)

• Ultra-low R

DS(on)

• Ultra-low gate charge (Qg)

• 100 avalanche tested

• dV/dt ruggedness

• Compliant to RoHS Directive 2002/95/EC

Applications

• PFC power supply stages

• Hard switching topologies

• Solar inverters

• UPS

• Motor control

• Lighting

• Server telecom