位置:SIHFU9210-GE3 > SIHFU9210-GE3详情
SIHFU9210-GE3中文资料
SIHFU9210-GE3数据手册规格书PDF详情
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR9210, SiHFR9210)
• Straight lead (IRFU9210, SiHFU9210)
• Available in tape and reel
• P-channel
• Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface-mount applications.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY |
20+ |
TO251 |
100 |
原装 |
|||
VISHAY/威世 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
23+ |
SOT263 |
7000 |
||||
VISHAY/威世 |
23+ |
TO-251 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
2022+ |
TO-251 |
50000 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
VISHAY(威世) |
2447 |
TO-251-3 |
315000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
VISHAY(威世) |
2021+ |
TO-251-3 |
499 |
SIHFU9210-GE3 资料下载更多...
SIHFU9210-GE3 芯片相关型号
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- GCA3106F-18-1SNB
- GCA3106FG-18-1SNB
- GCA3106M-18-1SNB
- SIHFU9210_V01
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- SIHFU9214
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