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SIHFIBC30G-E3中文资料
SIHFIBC30G-E3数据手册规格书PDF详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
SIHFIBC30G-E3产品属性
- 类型
描述
- 型号
SIHFIBC30G-E3
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
更新时间：2025-10-10 11:10:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-220F |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
TO-220F |
22+ |
6000 |
十年配单,只做原装 |
|||
VISHAY/威世 |
20+ |
TO-220F |
7500 |
现货很近!原厂很远!只做原装 |
|||
VB |
21+ |
TO-220FP |
10000 |
原装现货假一罚十 |
|||
I |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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