FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low RDS(on) Symmetrical P-Channel MOSFET

• Integrated Body Bias For Bi-Directional

Blocking

• 2.5 V to 5.5 V Operation

• Exceeds ± 2 kV ESD Protected

• Solution for High-Side Battery Disconnect Switching

(BDS)

• Supports Battery Switching in Multiple Battery Cell

Phones, PDAs and PCS Products

• Low Profile, Small Footprint TSOP-6 Package

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The Si3831DV is a low on-resistance p-channel power

MOSFET providing bi-directional blocking and conduction.

Bi-directional blocking is facilitated by combining a 4-terminal

symmetric p-channel MOSFET with a body bias selector

circuita. Circuit operation automatically biases the p-channel

body to the most positive source/drain potential thereby

maintaining a reverse bias across the diode present between

the source/drain terminals. Off-state device blocking

characteristics are symmetric, facilitating bi-directional

blocking for high-side battery switching in portable products.

Gate drive is facilitated by negatively biasing the gate relative

to the body potential. The off-state is achieved by biasing the

gate to the most positive supply voltage or to the body

potential. The Si3831DV is available in a 6-pin TSOP-6

package rated for the - 25 °C to 85 °C commercial

temperature range.