DESCRIPTION

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics