FEATURES

• TrenchFET® power MOSFETs

• High-side switching

• Ease in driving switches

• Low offset (error) voltage

• Low-voltage operation

• High-speed circuits

• Typical ESD protection:

n-channel 900 V, p-channel 900 V (HBM)

• 100 Rg tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Load switch, small signal switches and level-shift

switches

- Battery operated systems

- Portable