DESCRIPTION

The SFH691AT has a GaAs infrared emitting diode emitter,

which is optically coupled to silicon planar phototransistor

detector, and is incorporated in a 4 pin 100 mil lead pitch

miniflat package. It features a high current transfer ratio, low

coupling capacitance, and high isolation voltage.

The coupling devices are designed for signal transmission

between two electrically separated circuits.

FEATURES

• SOP (small outline package)

• Isolation test voltage, 3750 VRMS (1 s)

• High collector emitter breakdown voltage,

VCEO = 70 V

• Bidirectional AC input

• Low saturation voltage

• Fast switching times

• Temperature stable

• Low coupling capacitance

• End stackable, 0.100 (2.54 mm) spacing

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912