Description

The SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation volt age. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.

Features

• Good CTR Linearity Depending on Forward Current

• Isolation Test Voltage, 5300 VRMS

• High Collector-Emitter Voltage, VCEO= 70 V

• Low Saturation Voltage

• Fast Switching Times

• Low CTR Degradation

• Temperature Stable

• Low Coupling Capacitance

• End-Stackable, .100 (2.54 mm) Spacing

• High Common-Mode Interference Immunity

• Lead-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC