DESCRIPTION

The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.

The coupling devices are designed for signal transmission between two electrically separated circuits.

FEATURES

• Low CTR degradation

• Good CTR linearity depending on forward current

• Isolation test voltage, 5300 VRMS

• High collector emitter voltage, VCEO = 70 V

• Low saturation voltage

• Fast switching times

• Temperature stable

• Low coupling capacitance

• End stackable, 0.100 (2.54 mm) spacing

• High common mode interference immunity (unconnected base)

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS