DESCRIPTION

The SFH601 has a GaAs infrared emitting diode emitter,

which is optically coupled to a silicon planar phototransistor

detector, and is incorporated in a plastic DIP-6 package.

It features a high current transfer ratio, low coupling

capacitance, and high isolation voltage.

The coupling device is designed for signal transmission

between two electrically separated circuits.

FEATURES

• Isolation test voltage, 5000 VRMS

• Low coupling capacitance

• High common mode transient immunity

• Storage temperature, -55 ° to +150 °C

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912