DESCRIPTION

The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

FEATURES

• Endstackable to 2.54 mm (0.1) spacing

• DC isolation test voltage VISO = 5000 VRMS

• Low coupling capacitance of typical 0.3 pF

• Current transfer ratio (CTR) of typical 100

• Low temperature coefficient of CTR

• Wide ambient temperature range

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• Feature phones

• Answering machines

• PBX

• Fax machines