DESCRIPTION

The K814P, K824P, K844P consist of a phototransistor

optically coupled to 2 gallium arsenide infrared emitting

diodes (reverse polarity) in 4 pin (single); 8 pin (dual) or

16-pin (quad) plastic dual inline package.

The elements are mounted on one leadframe providing a

fixed distance between input and output for highest safety

requirements

FEATURES

• Endstackable to 2.54 mm (0.1) spacing

• DC isolation test voltage VISO = 5000 VRMS

• Low coupling capacitance of typical 0.3 pF

• Current transfer ratio (CTR) of typical 100 %

• Low temperature coefficient of CTR

• Wide ambient temperature range

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and

WEEE 2002/96/EC