FEATURES

• Isolated package

• High voltage isolation = 2.5 kVRMS (t = 60 s;

f = 60 Hz)

• Sink to lead creepage distance = 4.8 mm

• Logic-level gate drive

• RDS(on) specified at VGS = 4 V and 5 V

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a

100 micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.