DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

FEATURES

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ44, SiHFZ44 for Linear/Audio Applications

• Compliant to RoHS Directive 2002/95/EC