FEATURES

• Advanced process technology

• Fully avalanche rated

• Surface-mount (IRFR9310, SiHFR9310)

• Straight lead (IRFU9310, SiHFU9310)

• P-channel

• Fast switching

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.