VDS (V) 250

RDS(on) (Ω) VGS = 10 V 1.1

Qg (Max.) (nC) 14

Qgs (nC) 2.7

Qgd (nC) 7.8

Configuration Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serveres as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free