位置:ILD615-3X017T > ILD615-3X017T详情

ILD615-3X017T中文资料

厂家型号

ILD615-3X017T

文件大小

213.3Kbytes

页面数量

12

功能描述

Optocoupler, Phototransistor Output (Dual, Quad Channel)

晶体管输出光电耦合器 SMD-8 CPL DUAL 100-200% CTR V

数据手册

下载地址一下载地址二到原厂下载

简称

VISHAY威世科技

生产厂商

Vishay Siliconix

中文名称

官网

ILD615-3X017T数据手册规格书PDF详情

DESCRIPTION

The ILD615, ILQ615 are multi-channel phototransistor

optocouplers that use GaAs IRED emitters and high gain

NPN phototransistors. These devices are constructed using

over / under leadframe optical coupling and double molded

insulation technology resulting a withstand test voltage of

7500 VACPEAK and a working voltage of 1700 VRMS.

The binned min./max. and linear CTR characteristics make

these devices well suited for DC or AC voltage detection.

Eliminating the phototransistor base connection provides

added electrical noise immunity from the transients found in

many industrial control environments.

Because of guaranteed maximum non-saturated and

saturated switching characteristics, the ILD615, ILQ615 can

be used in medium speed data I/O and control systems. The

binned min. / max. CTR specification allow easy worst case

interface calculations for both level detection and switching

applications. Interfacing with a CMOS logic is enhanced by

the guaranteed CTR at IF = 1 mA.

FEATURES

• Identical channel to channel footprint

• Dual and quad packages feature:

- Reduced board space

- Lower pin and parts count

- Better channel to channel CTR match

- Improved common mode rejection

• Isolation rated voltage from double molded

package, 4420 VRMS

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

AGENCY APPROVALS

• UL1577, file no. E52744, double protection

• cUL

• DIN EN 60747-5-5 (VDE 0884-5), available with option 1

• CQC: GB8898-2011

• CSA 93751

• FIMKO

ILD615-3X017T产品属性

  • 类型

    描述

  • 型号

    ILD615-3X017T

  • 功能描述

    晶体管输出光电耦合器 SMD-8 CPL DUAL 100-200% CTR V

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 输入类型

    DC

  • 最大集电极/发射极电压

    70 V

  • 最大集电极/发射极饱和电压

    0.4 V

  • 绝缘电压

    5300 Vrms

  • 电流传递比

    100 % to 200 %

  • 最大正向二极管电压

    1.65 V

  • 最大输入二极管电流

    60 mA

  • 最大集电极电流

    100 mA

  • 最大功率耗散

    100 mW

  • 最大工作温度

    + 110 C

  • 最小工作温度

    - 55 C

  • 封装/箱体

    DIP-4

  • 封装

    Bulk

更新时间:2025-10-5 10:02:00
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