位置:IL1206AT > IL1206AT详情

IL1206AT中文资料

厂家型号

IL1206AT

文件大小

152.89Kbytes

页面数量

8

功能描述

Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 Package, 110 °C Rated

晶体管输出光电耦合器 Phototransistor Out CTR 63-125%

数据手册

下载地址一下载地址二到原厂下载

简称

VISHAY威世

生产厂商

Vishay Siliconix

中文名称

官网

IL1206AT数据手册规格书PDF详情

FEATURES

• Operating temperature from -55 °C to +110 °C

• High BVCEO, 70 V

• Isolation test voltage, 4000 VRMS

• Industry standard SOIC-8 surface mountable

package

• Compatible with dual wave, vapor phase and IR

reflow soldering

• Lead (Pb)-free component

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• AC adapters

• PLCs

• Switch mode power supplies

• DC/DC converters

• Microprocessor I/O interfaces

• General impedance matching circuits

AGENCY APPROVALS

• UL1577 - file no. E52744 system code Y

• cUL - file no. E52744

• DIN EN 60747-5-5 (VDE 0884) available with option 1

• CSA 93751

• FIMKO

DESCRIPTION

The 110 °C 1206AT, 1207AT, 1208AT are optically coupled

pairs with a gallium arsenide infrared LED and a silicon NPN

phototransistor. Signal information, including a DC level,

can be transmitted by the device while maintaining a high

degree of electrical isolation between input and output. This

family comes in a standard SOIC-8 small outline package for

surface mounting which makes them ideally suited for high

density application with limited space. In addition to

eliminating through-hole requirements, this package

conforms to standards for surface mounted devices.

A specified minimum and maximum CTR allows a narrow

tolerance in the electrical design of the adjacent circuits. The

high BVCEO of 70 V gives a higher safety margin compared

to the industry standard 30 V.

IL1206AT产品属性

  • 类型

    描述

  • 型号

    IL1206AT

  • 功能描述

    晶体管输出光电耦合器 Phototransistor Out CTR 63-125%

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 输入类型

    DC

  • 最大集电极/发射极电压

    70 V

  • 最大集电极/发射极饱和电压

    0.4 V

  • 绝缘电压

    5300 Vrms

  • 电流传递比

    100 % to 200 %

  • 最大正向二极管电压

    1.65 V

  • 最大输入二极管电流

    60 mA

  • 最大集电极电流

    100 mA

  • 最大功率耗散

    100 mW

  • 最大工作温度

    + 110 C

  • 最小工作温度

    - 55 C

  • 封装/箱体

    DIP-4

  • 封装

    Bulk

更新时间:2025-10-11 14:04:00
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