DESCRIPTION

HFA08TB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the HFA08TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs.

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low IRRM

• Very low Qrr

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count