FEATURES

• Fast switching - tON: 12 ns

• Low charge injection: ± 2 pC

• Wide bandwidth: 500 MHz

• 5 V CMOS logic compatible

• Low RDS(on): 18 

• Low quiescent power : 1.2 nW

• Single supply operation

BENEFITS

• Improved data throughput

• Minimal switching transients

• Improved system performance

• Easily interfaced

• Low insertion loss

• Minimal power consumption

APPLICATIONS

• Fast sample-and-holds

• Synchronous demodulators

• Pixel-rate video switching

• Disk/tape drives

• DAC deglitching

• Switched capacitor filters

• GaAs FET drivers

• Satellite receivers

DESCRIPTION

The DG611, DG612, DG613 feature high-speed lowcapacitance

lateral DMOS switches. Charge injection has

been minimized to optimize performance in fast sample-andhold

applications.

Each switch conducts equally well in both directions when on

and blocks up to 16 Vp-p when off. Capacitances have been

minimized to ensure fast switching and low-glitch energy. To

achieve such fast and clean switching performance, the

DG611, DG612, DG613 are built on the Vishay Siliconix

proprietary D/CMOS process. This process combines

n-channel DMOS switching FETs with low-power CMOS

control logic and drivers. An epitaxial layer prevents latchup.

The DG611 and DG612 differ only in that they respond to

opposite logic levels. The versatile DG613 has two normally

open and two normally closed switches. It can be given

various configurations, including four SPST, two SPDT, one

DPDT.

For additional information see Applications Note AN207.