FEATURES

• Low switch on-resistance (0.86 )

• 1.65 V to 5.5 V single supply operation

• Isolation in powered-off mode

• Guaranteed 1.8 V logic high

• Control logic inputs can go over V+

• Low charge injection (5 pC)

• Low total harmonic distortion

• Break before make switching

• Latch-up performance exceeds 300 mA per JESD 78

• ESD tested

- 7000 V human body model (JS-001)

- 1000 V charge device model (JS-002)

• Ultra compact μDFN-6L 1 mm x 1 mm x 0.35 mm package

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Smartphones and tablets

• Consumer and computing

• Portable instrumentation

• Medical equipment

DESCRIPTION

The DG4157E is a high performance single-pole,

double-throw (SPDT) analog switch designed for 1.65 V to

5.5 V operation with a single power rail.

Fabricated with high density CMOS technology, the device

achieves low on resistance of 0.86  at a 4.5 V power

supply, low power consumption, and fast switching speeds. 

The DG4157E can handle both analog and digital signals

and permits signals with amplitudes of up to V+ to be

transmitted in either direction. Its control logic inputs can go

over V+ up to 5.5 V. The control logic input high threshold is

guaranteed as low as 1.8 V over the power supply range up

to 5.5 V. It features break before make switching

performance. Its -3 dB bandwidth is typically 152 MHz.

A powered-off protection circuit is built into the switch to

prevent an abnormal current flow from COM pin to V+ during

the power-down condition. Each output pin can withstand

greater than 7 kV (human body model). 

Operation temperature is specified from -40 °C to +85 °C.

The DG4157E is available in the ultra compact μDFN-6L and

SC-70-6 packages.