DESCRIPTION

CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens.

FEATURES

• Package type: leaded

• Package form: T-¾

• Dimensions (in mm): Ø 1.8

• Peak wavelength: λp = 950 nm

• High reliability

• Angle of half intensity: φ = ± 55°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matches with detector BPW16N

• Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC

APPLICATIONS

• Radiation source in near infrared range