DESCRIPTION

BPW16N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-¾ plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch.

FEATURES

• Package type: leaded

• Package form: T-¾

• Dimensions (in mm): Ø 1.8

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity: ϕ = ± 40°

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICATIONS

• Detector in electronic control and drive circuits