FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Optimized VF vs. IR trade off for high efficiency

• Increased ruggedness for reverse avalanche capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Full lead (Pb)-free and RoHS compliant devices

• Designed and qualified for industrial level

APPLICATIONS

• High efficiency SMPS

• Automotive

• High frequency switching

• Output rectification

• Reverse battery protection

• Freewheeling

• Dc-to-dc systems

• Increased power density systems