Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

VRRM = 1600 V IdAVM = 116/145 A Features • Soldering connections for PCB mounting • Convenient package outline • Thermistor Applications • Drive Inverters with brake system Advantages • 2 functions in one package • Easy to mount with two screws • Suitable for wave soldering • High tempe

Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

VRRM = 1600 V IdAVM = 116/145 A Features • Soldering connections for PCB mounting • Convenient package outline • Thermistor Applications • Drive Inverters with brake system Advantages • 2 functions in one package • Easy to mount with two screws • Suitable for wave soldering • High tempe

3~ Rectifier Bridge Brake Unit NTC

3~ Rectifier Bridge + Brake Unit + NTC Features / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● NTC ● X2PT - 2nd generation Xtreme light Punch Through ● Rugged X2PT des

封装/外壳：E2 包装：散装 描述：BRIDGE RECT 3P 1.6KV 145A E2 分立半导体产品 二极管 - 桥式整流器

BRIDGE RECT 3P 1.6KV 145A E2

三相桥式整流器加制动装置

封装/外壳：E2 包装：散装 描述：BRIDGE RECT 3P 1.6KV 150A E2 分立半导体产品 二极管 - 桥式整流器

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode Light source for optical fiber communications, Features ● Red light emission close to monochromatic light : λP = 700 nm ● High-power output, high-efficiency ● High coupling characteristics and suits to a plastic fiber ● High-speed response : –3dB modulation of

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode Light source for optical fiber communications, Features ● Red light emission close to monochromatic light : λP = 700 nm ● High-power output, high-efficiency ● High coupling characteristics and suits to a plastic fiber ● High-speed response : –3dB modulation of

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP