Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

VRRM = 1600 V IdAVM = 116/145 A Features • Soldering connections for PCB mounting • Convenient package outline • Thermistor Applications • Drive Inverters with brake system Advantages • 2 functions in one package • Easy to mount with two screws • Suitable for wave soldering • High tempe

Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

VRRM = 1600 V IdAVM = 116/145 A • Soldering connections for PCB mounting\n• ThermistorApplications\n• 2 functions in one package\n• Suitable for wave soldering\n• High temperature and power cycling capability ;

Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

VRRM = 1600 V IdAVM = 116/145 A Features • Soldering connections for PCB mounting • Convenient package outline • Thermistor Applications • Drive Inverters with brake system Advantages • 2 functions in one package • Easy to mount with two screws • Suitable for wave soldering • High tempe

Standard Rectifier Module(3~ Rectifier Bridge Brake Unit NTC)

3~ Rectifier Bridge + Brake Unit + NTC Features / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● NTC Applications: ● 3~ Rectifier with brake unit for drive inverters

封装/外壳：E2 包装：散装 描述：BRIDGE RECT 3P 1.6KV 116A E2 分立半导体产品 二极管 - 桥式整流器

封装/外壳：模块 包装：托盘 描述：BRIDGE RECT 3P 1.6KV 120A MODULE 分立半导体产品 二极管 - 桥式整流器

三相桥式整流器加制动装置

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS