.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (θ1/2) of 40°. These devices are spectrally and mechanically matched to the VTE12xxW ser

Low-cost visible and near-IR photodetection

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Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions .047 x .020 Inches b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage N/A e) Total Number of Ends 24 f) Approx.

Original Strain Relief Bushings

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500/10 31 DS GW

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500/10 31 MDS GW

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500/11 31 DS GW

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