.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are s

Integrated Circuit Audio Power Amplifier, 7W

Description: The NTE1115 and NTE1115A are monolithic integrated circuits designed for use as low frequency class B amplifiers. These devices provide 7W power output at 16V/4Ω, 6W at 14.4V/4Ω, 2.5W at 9V/Ω, 1W at 6V/4Ω and works with a wide range of supply voltages (4V to 20V); and gives high ou

Integrated Circuit Audio Power Amplifier, 7W

Description: The NTE1115 and NTE1115A are monolithic integrated circuits designed for use as low frequency class B amplifiers. These devices provide 7W power output at 16V/4Ω, 6W at 14.4V/4Ω, 2.5W at 9V/Ω, 1W at 6V/4Ω and works with a wide range of supply voltages (4V to 20V); and gives high ou

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

Silicon PNP epitaxial planer transistor

For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UN1115 × 2 elements