VTP Process Photodiodes

PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.

快速响应硅光电二极管

这种快速响应的硅光电二极管的感光面积为21mm2，光谱响应范围介于400nm至 1100nm之间。我们的系列光电二极管设计用于提供低结电容，可实现快速响应能力。可以在反向偏置下正常工作以提高响应速度，也可用于光伏模式。这些器件在IR区域有很好的响应，并且与IR发光二极管匹配良好。\n\n功能与优点：\n\n可见光至IR光谱范围\n\n峰值波长：925nm\n\n感光面积大，线性范围1-2%，可使用70到90年\n\n低暗电流\n\n高分流电阻\n\n低结电容\n\n快速响应\n\n符合RoHS标准\n\n应用领域：\n\n烟雾检测\n\n条形码扫描\n\n光照度计\n\n脉搏血氧仪 • 感光面积=21mm2• 短路电流=在100fc，2850K时，最小值为200 µA，• 短路电流=在100µW/cm2，940nm时，最小值为11.4µA• 暗电流=在反向偏压100mV时最大值为50nA• 结电容 = 典型值0.35 nF（偏压为0 V时）• 光谱范围 = 400 nm至1100 nm• 峰值光谱响应=925 nm• 峰值波长的灵敏度=通常为0,55A/W;

VTP Process Photodiodes

PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.

Dual 2-wide 2-input AND-OR-invert gate

DESCRIPTION The HEF4085B is a dual 2-wide 2-input AND-OR-invert gate, each with an additional input (A4 or B4) which can be used as either an expander input or an inhibit input. A HIGH on A4 or B4 forces the output (OA or OB) LOW independent of the other inputs (A0 to A3 or B0 to B3). The outputs

Dual 2-wide 2-input AND-OR-invert gate

DESCRIPTION The HEF4085B is a dual 2-wide 2-input AND-OR-invert gate, each with an additional input (A4 or B4) which can be used as either an expander input or an inhibit input. A HIGH on A4 or B4 forces the output (OA or OB) LOW independent of the other inputs (A0 to A3 or B0 to B3). The outputs

Dual 2-wide 2-input AND-OR-invert gate

DESCRIPTION The HEF4085B is a dual 2-wide 2-input AND-OR-invert gate, each with an additional input (A4 or B4) which can be used as either an expander input or an inhibit input. A HIGH on A4 or B4 forces the output (OA or OB) LOW independent of the other inputs (A0 to A3 or B0 to B3). The outputs