蓝光增强型硅光电二极管

VTB1013BH是采用气密TO-46扁平窗口封装的硅光电二极管。\n\n此光电二极管主要在光伏模式下使用，但也可以在较小的反向偏压下工作。它采用极高分流电阻的设计，因此在高增益互阻抗运放电路中使用时偏置量较小。\n\n功能与优点：\n\n可见光光谱范围\n\n在70至90年内保持1%-2%的线性度\n\n极弱暗电流\n\n极高分流电阻\n\n符合RoHS标准\n\n应用领域：\n\n环境光传感\n\n光照度计\n\n火焰监测\n\n光度测定 • 感光面积 = 1.6 mm2• 短路电流 = 最小值0.8 µA（100 fc和2850 K时）• 暗电流 = 最大值20 pA（反向偏压为2 V时）• 结电容 = 典型值0.31 nF（偏压为0 V时）• 光谱范围 = 330 nm至720 nm• 峰值光谱响应=580 nm• 峰值波长的灵敏度=通常为0,29A/W• 角响应 = ±35度（50%响应时）;

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.