VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

蓝光增强型硅光电二极管

VTB1012BH硅光电二极管的感光面积为1.6 mm2，主要在光伏模式下使用，但也可以在较小的反向偏压下工作。此光电二极管采用极高分流电阻的设计，因此在高增益互阻抗运放电路中使用时偏置量较小。\n\n\n\n功能与优点：\n\n可见光光谱范围\n\n在70至90年内保持1%-2%的线性度\n\n极弱暗电流\n\n极高分流电阻\n\n符合RoHS标准\n\n应用领域：\n\n环境光传感\n\n光照度计\n\n火焰监测\n\n光度测定 • 感光面积 = 1.6 mm2• 短路电流 = 最小值0.8 µA（100 fc和2850 K时）• 暗电流 = 最大值100 pA（反向偏压为2 V时）• 结电容 = 典型值0.31 nF（偏压为0 V时）• 光谱范围 = 330 nm至720 nm• 峰值光谱响应=580 nm• 峰值波长的灵敏度=通常为0,29A/W• 角响应 = ±35度（50%响应时）;

蓝光增强型硅光电二极管

VTB1012H蓝光增强型硅光电二极管的感光面积为1.6 mm2，光谱响应范围介于320nm和1100nm之间。\n\n此系列P-on-N硅平面光电二极管的设计旨在实现在可见光光谱范围内的最佳响应。这些光电二极管主要在光伏模式下使用，但也可以在较小的反向偏压下工作。它们同时具有极高的分流电阻，因此在高增益互阻抗运放电路中使用时偏置量较小。\n\n功能与优点：\n\nUV至近IR光谱范围\n\n在70至90年内保持1%-2%的线性度\n\n极弱暗电流\n\n极高分流电阻\n\n符合RoHS指令标准\n\n应用领域：\n\n蓝光传感\n\n光照度计\n\n火焰监测\n\n光度测定 • 感光面积 = 1.6 mm2• 短路电流=在100fc，2850K时，最小值为8 µA，• 暗电流 = 最大值100 pA（反向偏压为2 V时）• 结电容 = 典型值0.31 nF（偏压为0 V时）• 光谱范围 = 320 nm至1100 nm• 峰值光谱响应=920 nm• 峰值波长的灵敏度=通常为0,5A/W• 角响应 = ±35度（50%响应时）;

封装/外壳：TO-46-2 透镜顶部金属罐 包装：盒 描述：SI PD, TO-46, 1.6MM2, IR FILTER 传感器，变送器 光学传感器 - 光电二极管

120W STEP-DOWN SWITCHING REGULATOR

DESCRIPTION The GS-R1012 is a step-down switching voltage regulator suitable to provide 12V/10A output voltage from a wide input voltage range (18 to 36V). FEATURES ■ Wide input voltage range (18 to 36V) ■ High efficiency (90 min.) ■ Parallel operation with current sharing ■ Synchronization

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX2 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 30mW. ML1XX2 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

VTP Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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