Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC

Trench MOS Barrier Schottky Rectifier

文件：148.1 Kbytes Page：5 Pages

Trench MOS Barrier Schottky Rectifier

文件：148.1 Kbytes Page：5 Pages

Trench MOS Barrier Schottky Rectifier

文件：138.8 Kbytes Page：5 Pages

封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 5A 200V TO-220AC 分立半导体产品 二极管 - 整流器 - 单

肖特基二极管与整流器 5A,200V,TRENCH SKY RECT.

TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

Trench MOS Barrier Schottky Rectifier

文件：152.12 Kbytes Page：6 Pages

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

封装/外壳：TO-220-2 包装：管件管件 描述：DIODE SCHOTTKY 200V 5A TO220AC 分立半导体产品 二极管 - 整流器 - 单

Trench MOS Barrier Schottky Rectifier

文件：141.4 Kbytes Page：5 Pages

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

횠6.1mm mounting Robust stainless steel housing

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Sandblast Stencil

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