High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). FE

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). FE

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

Package type: surface mount\n Package form: 0805\n Dimensions (L x W x H in mm): 2 x 1.25 x 0.85\n\n ;

封装/外壳：0805（2012 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 850NM 100MA 0805 光电器件 LED 发射器 - 红外，紫外，可见光

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

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High Speed Infrared Emitting Diodes

文件：149.59 Kbytes Page：6 Pages

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). FE

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). FE

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1850ITX01 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD).

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

Package type: surface mount\n Package form: 0805\n Dimensions (L x W x H in mm): 2 x 1.25 x 0.85\n\n ;

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1850ITX01 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD).

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

Package type: surface mount\n Package form: 0805\n Dimensions (L x W x H in mm): 2 x 1.25 x 0.85\n\n ;

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1850X01 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD).

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

DESCRIPTION As part of the SurfLightTM portfolio, the VSMY1850X01 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD).

High Speed Infrared Emitting Diodes

文件：149.59 Kbytes Page：6 Pages

High Speed Infrared Emitting Diodes, 850 nm,Surface Emitter Technology

文件：155.37 Kbytes Page：6 Pages

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

文件：152.35 Kbytes Page：6 Pages

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

文件：152.35 Kbytes Page：6 Pages

封装/外壳：0805（2012 公制） 包装：托盘 描述：EMITTER IR 850NM 100MA 0805 光电器件 LED 发射器 - 红外，紫外，可见光

High Speed Infrared Emitting Diodes

文件：152.46 Kbytes Page：6 Pages

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

文件：128 Kbytes Page：7 Pages

High Speed Infrared Emitting Diodes

文件：152.46 Kbytes Page：6 Pages

Integrated Circuit Dual 12W/Channel Audio Power Amplifier

Description: The NTE1850 is a dual Hi–Fi audio power amplifier in a 9–Lead SIP type package designed for mains–fed applications such as stereo TV sound and stereo radio. The circuit is optimal for symmetrical power supplies but is also well suited to asymmetrical power supply systems. An output

Quad Band GSM/GPRS Power Amplifier Module

General Description The RMPA1850 power amplifier module (PAM) is designed for GSM/GPRS cellular handset applications. The PAM a fully input and output 50Ω matched. It also includes integrated power control and band select. Features ■ Quad band, matched module ■ High efficiency- 55 GSM850/900,

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1850 is a switching device which can be driven directly by a 2.5-V power source. The µPA1850 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

24-BIT, 96-kHz STEREO A/D CONVERTER WITH 6 X 2-CHANNEL MUX AND PGA

文件：370.87 Kbytes Page：10 Pages

24-BIT, 96-kHz STEREO A/D CONVERTER WITH 6 X 2-CHANNEL MUX AND PGA

文件：370.87 Kbytes Page：10 Pages