High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION VSMB10940 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: Surface mount • Packag

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

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High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

文件：295.97 Kbytes Page：6 Pages

封装/外壳：2-SMD，无引线 包装：卷带（TR）剪切带（CT） 描述：EMITTER IR 940NM 65MA SMD 光电器件 LED 发射器 - 红外，紫外，可见光

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION VSMB10940 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: Surface mount • Packag

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

文件：295.97 Kbytes Page：6 Pages

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

文件：293.79 Kbytes Page：6 Pages

封装/外壳：2-SMD，无引线 包装：散装 描述：EMITTER IR 940NM 65MA SMD 光电器件 LED 发射器 - 红外，紫外，可见光

Silicon PIN Photodiode

DESCRIPTION VEMD10940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matched with IR emitters operating at wavelength of 830 nm to 950 nm. The photo sensitive area of the chip is 0.23 mm2.

Silicon PIN Photodiode

DESCRIPTION VEMD10940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matched with IR emitters operating at wavelength of 830 nm to 950 nm. The photo sensitive area of the chip is 0.23 mm2.

LilyPad SimpleSnap Protoboard

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Silicon PIN Photodiode

文件：289.14 Kbytes Page：6 Pages