MOSFET

N沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如电子烟和马达驱动等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试;

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems ■ Features • High-power output, high-efficiency • Light-emitting pattern of almost point source • Ultra-miniature, thin side-view type package

2.5?? Quad, SPST, CMOS Analog Switches

General Description The MAX4601/MAX4602/MAX4603 quad analog switches feature low on-resistance of 2.5Ω max. On-resistance is matched between switches to 0.5Ω max and is flat (0.5Ω max) over the specified signal range. Each switch can handle Rail-to-Rail® analog signals. The off leakage current is

2.5?? Quad, SPST, CMOS Analog Switches

General Description The MAX4601/MAX4602/MAX4603 quad analog switches feature low on-resistance of 2.5Ω max. On-resistance is matched between switches to 0.5Ω max and is flat (0.5Ω max) over the specified signal range. Each switch can handle Rail-to-Rail® analog signals. The off leakage current is

2.5?? Quad, SPST, CMOS Analog Switches

General Description The MAX4601/MAX4602/MAX4603 quad analog switches feature low on-resistance of 2.5Ω max. On-resistance is matched between switches to 0.5Ω max and is flat (0.5Ω max) over the specified signal range. Each switch can handle Rail-to-Rail® analog signals. The off leakage current is

Bipolar Integrated Circuit with Photodetection Function

For infrared remote control systems Features Extension distance is 8 m or more External parts not required Adoption of visible light cutoff resin