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VS-P132

Power Modules, Passivated Assembled Circuit Elements

DESCRIPTION The VS-P400 series of integrated power circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supp

VISHAYVishay Siliconix

威世威世科技公司

VS-P132

Single Phase Bridge, Passivated Assembled Circuit Elements, 25 A

Glass passivated junctions for greater reliability\nElectrically isolated base plate\nAvailable up to 1200 VRRM/VDRM;

VISHAYVishay Siliconix

威世威世科技公司

VS-P132

封装/外壳:8-PACE-PAK 包装:散装 描述:SCR BRIDGE 600V 25A PACE-PAK 分立半导体产品 晶闸管 - SCR - 模块

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VS-P132

Power Modules, Passivated Assembled Circuit Elements, 25 A

文件:198.18 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

MOSPEC

统懋

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

VS-P132产品属性

  • 类型

    描述

  • 型号

    VS-P132

  • 功能描述

    SCR模块 600 Volt 25 Amp

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 开启状态

    RMS

  • 电流(It_RMS)

    260 A

  • 不重复通态电流

    4000 A 最大转折电流

  • IBO

    4200 A 额定重复关闭状态电压

  • VDRM

    1.6 kV

  • 关闭状态漏泄电流(在VDRM_IDRM下)

    20 mA

  • 开启状态电压

    1.43 V 保持电流(Ih

  • 最大工作温度

    + 150 C

  • 安装风格

    Chassis

  • 封装/箱体

    INT-A-PAK

更新时间:2021-9-14 10:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
25+
SMD
96
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