Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A

FEATURES • Trench IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: fo

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A

FEATURES • Trench IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: fo

封装/外壳：SOT-227-4，miniBLOC 包装：托盘 描述：SOT-227 - SINGLE SWITCH IGBT + A 分立半导体产品 晶体管 - IGBT - 模块

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A

FEATURES • Trench IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: fo

NPT Gen 5 IGBT technology

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