Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A

FEATURES • Standard: optimized for minimum saturation voltage and low speed • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • Designed and qualified for industrial level • UL approved file E7

Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A

FEATURES • Standard: optimized for minimum saturation voltage and low speed • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • Designed and qualified for industrial level • UL approved file E7

封装/外壳：SOT-227-4，miniBLOC 包装：托盘 描述：IGBT MOD 600V 380A 893W SOT227 分立半导体产品 晶体管 - IGBT - 模块

Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A

FEATURES • Standard: optimized for minimum saturation voltage and low speed • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • Designed and qualified for industrial level • UL approved file E7

Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Optimized for h

Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A

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Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

文件：272.53 Kbytes Page：9 Pages