Half Bridge IGBT Power Module, 600 V, 100 A

FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (direct copper b

Half Bridge IGBT Power Module, 600 V, 100 A

FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (direct copper b

封装/外壳：INT-A-PAK（3 + 4） 包装：散装 描述：IGBT MOD 600V 160A INT-A-PAK 分立半导体产品 晶体管 - IGBT - 模块

Half Bridge IGBT Power Module, 600 V, 100 A

Half Bridge IGBT Power Module, 600 V, 100 A

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Half Bridge IGBT Power Module, 600 V, 100 A

FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (direct copper b

Half Bridge IGBT Power Module, 600 V, 100 A

FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (direct copper b