Dual INT-A-PAK Low Profile ?쏦alf Bridge??(Trench PT IGBT), 300 A

FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of

封装/外壳：双 INT-A-PAK（3 + 8） 包装：托盘托盘 描述：IGBT MOD 600V 580A INT-A-PAK 分立半导体产品 晶体管 - IGBT - 模块

Trench PT IGBT technology

文件：180.46 Kbytes Page：9 Pages

Dual INT-A-PAK Low Profile ?쏦alf Bridge??(Trench PT IGBT), 300 A

FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of

Dual INT-A-PAK Low Profile Half-Bridge (Standard Speed IGBT), 300 A

FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • M

Dual INT-A-PAK Low Profile ?쏦alf Bridge??(Standard Speed IGBT), 300 A

FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • M

HALF-BRIDGE IGBT DUAL INT-A-PAK

文件：242.57 Kbytes Page：10 Pages