Very low conduction and switching losses

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封装/外壳：INT-A-Pak 包装：盒 描述：IGBT MOD 1200V 182A INT-A-PAK 分立半导体产品 晶体管 - IGBT - 模块

HALF-BRIDGE IGBT INT-A-PAK

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A

FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ultrasoft recovery • Industry standard package • UL approved file E78996