EMIPAK 1B PressFit Power Module 1200 V Silicon Carbide Single Phase Bridge, 30 A

FEATURES • SiC diode technology • Exposed Al2O3 substrate with low thermal resistance • Very high frequency operating • Low internal inductances • Qualified using AQG324 guideline as reference • PressFit pins locking technology PATENT(S): www.vishay.com/patents • Material categorization:

包装：托盘 描述：POWER MODULE 分立半导体产品 晶体管 - IGBT - 模块

IGBT

FEATURES · Low Saturation Voltage:VCE(sat)=1.75V@IC=30A · High Speed Switching · High Input Impedance APPLICATIONS · General Purpose Inverters · Automotive Chargers · UPS,PFC · Induction Heating

30.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

Shorted AnodeTM IGBT

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thinQ!TM SiC Schot tky Diode

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SCHOTTKY BARRIER RECTIFIERS

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