IGBT SIP Module (Fast IGBT)

FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed, see fig. 1 for current vs. frequency curve • Designed and qualified for industrial level • UL approved file E78996

封装/外壳：19-SIP（13 引线），IMS-2 包装：盒 描述：IGBT MODULE 600V 8.8A 23W IMS-2 分立半导体产品 晶体管 - IGBT - 模块

IGBT SIP Module (Fast IGBT)

IGBT SIP MODULE

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

IGBT SIP Module

DESCRIPTION The IGBT technology is the key to the advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This super

Short Circuit Rated UltraFast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

UltraFast IGBT IGBT SIP MODULE

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar p

IGBT SIP MODULE

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