RF POWER VERTICAL MOSFET

RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved R

RF POWER VERTICAL MOSFET

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封装/外壳：M113 包装：托盘 描述：RF MOSFET N-CHANNEL 50V M113 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

RF POWER VERTICAL MOSFET

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封装/外壳：M113 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET N-CHANNEL 50V M113 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

RF POWER VERTICAL MOSFET

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HF amplifier modules

DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 3 W

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow

VHF variable capacitance diode

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Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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