P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex VP0550 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The VP0550 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The VP0550 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex VP0550 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The VP0550 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

Surface Mount Schottky Barrier Diodes

REVERSE VOLTAGE 20-60 Volts FORWARD CURRENT 500 mAmpere Features: *Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. * For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228. * Low l

Evaluation Kits for the HFBR-1414PTZ Fiber Optic Transmitter and the AFBR-2418TZ/AFBR-2419TZ Fiber Optic Receivers

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The AFBR-0549Z/AFBR-0550Z evaluation kits provide

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Thermostat Output Temperature Sensor ICs with Power Down Function

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Low current Thermostat Output Temperature Sensor ICs

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