VNN7NV04PTR-E价格

参考价格:¥4.1403

型号:VNN7NV04PTR-E 品牌:STMicroelectronics 备注:这里有VNN7NV04PTR-E多少钱,2025年最近7天走势,今日出价,今日竞价,VNN7NV04PTR-E批发/采购报价,VNN7NV04PTR-E行情走势销售排行榜,VNN7NV04PTR-E报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VNN7NV04PTR-E

OMNIFET II fully autoprotected Power MOSFET

Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch

STMICROELECTRONICS

意法半导体

VNN7NV04PTR-E

OMNIFET II fully autoprotected Power MOSFET

Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch

STMICROELECTRONICS

意法半导体

VNN7NV04PTR-E

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNN7NV04PTR-E

门驱动器 40V 6A OMNIFET

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:618.75 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:619.37 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:619.37 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

VNN7NV04PTR-E产品属性

  • 类型

    描述

  • 型号

    VNN7NV04PTR-E

  • 功能描述

    MOSFET 40V 6A OMNIFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
24+
SOT-223-4
1612
深耕行业12年,可提供技术支持。
ST/意法
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST/意法
25+
SOT223
54658
百分百原装现货 实单必成
ST/意法
22+
SOT223
100000
代理渠道/只做原装/可含税
ST
18+
SOT223
445
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
24+
SOT223
880000
明嘉莱只做原装正品现货
ST/意法半导体
21+
SMD/SMT
8860
只做原装,质量保证
ST/意法
24+
SOT223
6000
只做原装 特价 一片起送
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
ST/意法半导体
21+
SMD/SMT
8860
原装现货,实单价优

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