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VNN7NV04PTR-E价格
参考价格：￥4.1403
型号：VNN7NV04PTR-E 品牌：STMicroelectronics 备注：这里有VNN7NV04PTR-E多少钱，2025年最近7天走势，今日出价，今日竞价，VNN7NV04PTR-E批发/采购报价，VNN7NV04PTR-E行情走势销售排行榜，VNN7NV04PTR-E报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNN7NV04PTR-E | OMNIFET II fully autoprotected Power MOSFET Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch | STMICROELECTRONICS 意法半导体 |   | |
VNN7NV04PTR-E | OMNIFET II fully autoprotected Power MOSFET Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch | STMICROELECTRONICS 意法半导体 | | |
VNN7NV04PTR-E | 封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：618.75 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | |
VNN7NV04PTR-E产品属性
- 类型
描述
- 型号
VNN7NV04PTR-E
- 功能描述
MOSFET 40V 6A OMNIFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
SOT223 |
9000 |
原装正品,支持实单! |
|||
ST/意法半导体 |
21+ |
SMD/SMT |
8860 |
只做原装,质量保证 |
|||
ST |
24+ |
SOT223 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ST(意法) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
ST |
23+ |
NA |
5000 |
正规渠道,只有原装! |
|||
ST |
25+ |
SOT-223 |
18000 |
原厂授权一级代理，专注军工、汽车、医疗、工业、新能源、电力！ |
|||
ST |
23+ |
SOT223 |
30000 |
代理全新原装现货,价格优势 |
|||
ST(意法) |
24+ |
SOT-223 |
12048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST |
25+23+ |
TO-223 |
18052 |
绝对原装正品全新进口深圳现货 |
|||
ST |
22+ |
SOT223 |
12245 |
现货,原厂原装假一罚十! |
VNN7NV04PTR-E芯片相关品牌
VNN7NV04PTR-E规格书下载地址
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DdatasheetPDF页码索引
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