位置：首页 > IC中文资料第88页 > VNK5N07FM
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNK5N07FM | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 |   | |
VNK5N07FM | fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | |
VNK5N07FM | 封装/外壳：SOT-82FM-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 SOT82FM 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VNK5N07FM | OMNIFET IIfully autoprotected Power MOSFET 文件：507.97 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET IIfully autoprotected Power MOSFET 文件：507.97 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | |
VNK5N07FM产品属性
- 类型
描述
- 型号
VNK5N07FM
- 功能描述
MOSFET N-CH 70V 5A SOT-82FM
- RoHS
是
- 类别
集成电路(IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关
- 系列
OMNIFET II™
- 标准包装
1,000
- 系列
-
- 类型
高端/低端驱动器
- 输入类型
SPI
- 输出数
8
- 导通状态电阻
850 毫欧，1.6 欧姆 电流 -
- 输出/通道
205mA，410mA 电流 -
- 峰值输出
500mA，1A
- 电源电压
9 V ~ 16 V
- 工作温度
-40°C ~ 150°C
- 安装类型
表面贴装
- 封装/外壳
20-SOIC（0.295，7.50mm 宽）
- 供应商设备封装
PG-DSO-20-45
- 包装
带卷(TR)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
SOT-82FM |
36500 |
一级代理/放心采购 |
|||
ST |
23+ |
HSSOP-12 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST/意法 |
22+ |
HSSOP12 |
9000 |
原装正品,支持实单! |
|||
原厂原包 |
24+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
ST/意法 |
22+ |
23089 |
|||||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST/只做原装 |
21+ |
HSSOP12 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
VNL001A |
3 |
3 |
VNK5N07FM规格书下载地址
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DdatasheetPDF页码索引
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