?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 IPAK 集成电路（IC） 配电开关，负载驱动器

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 IPAK 集成电路（IC） 配电开关，负载驱动器