OMNIFET fully autoprotected Power MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路（IC） 配电开关，负载驱动器

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

OMNIFET fully autoprotected Power MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP14N04 is a monolithic device made using STMicroelectronics VIPower Technology, Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh envi